I. INTRODUCTION Utilization of the electron spin as an information carrier in conventional semiconductor electronic devices results in a promising ideas for semiconductor spintronics [1-4]. Different types of spin-FETs [5-7] and bipolar spin-transistors
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چکیده
We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal/semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhanced proportionally to the total current, and the variation of current spin polarization does not exceed 20%.
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